Datasheet4U Logo Datasheet4U.com

PDD0966A

N-Channel MOSFETs

PDD0966A Features

* 100V,45A, RDS(ON) =18mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25ā„ƒ unless otherwise noted Symbol VDS VGS ID IDM EA

PDD0966A General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD0966A Datasheet (700.45 KB)

Preview of PDD0966A PDF

Datasheet Details

Part number:

PDD0966A

Manufacturer:

Potens semiconductor

File Size:

700.45 KB

Description:

N-channel mosfets.

šŸ“ Related Datasheet

PDD0966 - N-Channel MOSFETs (Potens semiconductor)
100V N-Channel MOSFETs PDD0966 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

PDD0960 - N-Channel MOSFETs (Potens semiconductor)
100V N-Channel MOSFETs PDD0960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

PDD0903 - P-Channel MOSFETs (Potens semiconductor)
100V P-Channel MOSFETs PDD0903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..

PDD0903-1 - P-Channel MOSFETs (Potens semiconductor)
100V P-Channel MOSFETs PDD0903-1 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technolog.

PDD0904 - N-Channel MOSFETs (Potens semiconductor)
100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDD0905 - P-Channel MOSFETs (Potens semiconductor)
100V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDD0906 - N-Channel MOSFETs (Potens semiconductor)
100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDD0910 - N-Channel MOSFETs (Potens semiconductor)
100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv.

TAGS

PDD0966A N-Channel MOSFETs Potens semiconductor

Image Gallery

PDD0966A Datasheet Preview Page 2 PDD0966A Datasheet Preview Page 3

PDD0966A Distributor