PDD4960

N-Channel MOSFETs

Potens semiconductor

PDD4960 Features

* 40V, 90A, RDS(ON) =3.8mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TST

PDD4960 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD4960 Datasheet (674.81 KB)

PDD4960 Datasheet Preview — Preview of PDD4960 PDF

Datasheet Details

Part number:

PDD4960

Manufacturer:

Potens semiconductor

File Size:

674.81 KB

Description:

N-channel mosfets.

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PDD4960 N-Channel MOSFETs Potens semiconductor

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PDD4960 Features

PDD4960 General Description

Datasheet Details

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