PDF6974-5 Datasheet (Potens semiconductor)

PDF6974-5, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDF6974-5 Features

* 65V,80A, RDS(ON) =2.8mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications GDS G S

* Networking

* Load Switch

* LED applications

* Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise