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PDK2612A N-Channel MOSFETs

PDK2612A Description

20V N-Channel MOSFETs PDK2612A General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDK2612A Features

* 20V/6.5A, RDS(ON) =22mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDK2612A
Manufacturer
Potens semiconductor
File Size
640.99 KB
Datasheet
PDK2612A-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDK2612A-like datasheet