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PDK3612

N-Channel MOSFETs

PDK3612 Features

* 20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sy

PDK3612 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDK3612 Datasheet (386.51 KB)

Preview of PDK3612 PDF

Datasheet Details

Part number:

PDK3612

Manufacturer:

Potens semiconductor

File Size:

386.51 KB

Description:

N-channel mosfets.

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TAGS

PDK3612 N-Channel MOSFETs Potens semiconductor

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