PDR04N50
Description
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply
BVDSS 500V
RDSON 3.2Ω
Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
ID 4A
TO251 Pin Configuration
G DS
Applications
- High efficient switched mode power supplies
- TV Power
- Adapter/charger
- Server Power
- PV Inverter / UPS
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
IDM EAS IAS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
-...
