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PDR0906 N-Channel MOSFETs

PDR0906 Description

100V N-Channel MOSFETs General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDR0906 Features

* 100V,15A, RDS(ON) =90mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDR0906
Manufacturer
Potens semiconductor
File Size
485.86 KB
Datasheet
PDR0906-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDR0906-like datasheet