PDR0906 Datasheet - Potens semiconductor

N-Channel MOSFETs

PDR0906 Features

* 100V,15A, RDS(ON) =90mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD

PDR0906 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDR0906 Datasheet (485.86 KB)

PDR0906 Datasheet Preview — Preview of PDR0906 PDF

Datasheet Details

Part number:

PDR0906

Manufacturer:

Potens semiconductor

File Size:

485.86 KB

Description:

N-channel mosfets.

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PDR0906 N-Channel MOSFETs Potens semiconductor

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PDR0906 Features

PDR0906 General Description

Datasheet Details

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