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PDR0958A Datasheet - Potens semiconductor

N-Channel MOSFETs

PDR0958A Features

* 100V,15A, RDS(ON) =85mĪ©@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25ā„ƒ unless otherwise noted Symbol VDS VGS ID IDM EA

PDR0958A General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDR0958A Datasheet (685.80 KB)

Preview of PDR0958A PDF

Datasheet Details

Part number:

PDR0958A

Manufacturer:

Potens semiconductor

File Size:

685.80 KB

Description:

N-channel mosfets.

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PDR0958A N-Channel MOSFETs Potens semiconductor

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