PJX17N80T Datasheet (Potens semiconductor)

PJX17N80T, N-Channel MOSFETS

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PJX17N80T Features

* 800V,17A, RDS(ON) =0.35Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* High efficient switched mode power supplies

* LED Lighting

* Adapter/charger S D G S Absolute Maximum Ratings Tc=25℃ unle