PJX17N80T Datasheet - Potens semiconductor

PJX17N80T N-Channel MOSFETS

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PJX17N80T Features

* 800V,17A, RDS(ON) =0.35Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* High efficient switched mode power supplies

* LED Lighting

* Adapter/charger S D G S Absolute Maximum Ratings Tc=25℃ unle

PJX17N80T-Potenssemiconductor.pdf

PJX17N80T Datasheet Preview — Preview of PJX17N80T PDF

Datasheet Details

Part number:

PJX17N80T

Manufacturer:

Potens semiconductor

File Size:

821.54 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PJX138K N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJX138L N-Channel Enhancement Mode MOSFET (Pan Jit International)

PJX20N60D N-Channel MOSFETS (Potens semiconductor)

PJX30N65T N-Channel MOSFETS (Potens semiconductor)

PJX53N65D N-Channel MOSFETS (Potens semiconductor)

PJX60N60T N-Channel MOSFETS (Potens semiconductor)

PJX8603 Complementary Enhancement Mode MOSFET (Pan Jit International)

PJX8802 20V N-CHANNEL MOSFET (Pan Jit International)

TAGS

PJX17N80T PJX17N80T N-Channel MOSFETS Potens semiconductor

PJX17N80T Distributor