PJX60N60T Datasheet (Potens semiconductor)

PJX60N60T, N-Channel MOSFETS

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PJX60N60T Features

* 600V,60A, RDS(ON) =65mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* High efficient switched mode power supplies

* LED Lighting

* Adapter/charger S GD S Absolute Maximum Ratings Tc=25℃ unles