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PDD3808Z N-Channel MOSFETs

PDD3808Z Description

30V N-Channel MOSFETs PDD3808Z General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD3808Z Features

* 30V,42A, RDS(ON) =9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDD3808Z
Manufacturer
Potens semiconductor
File Size
626.82 KB
Datasheet
PDD3808Z-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
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