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PDP3960 N-Channel MOSFETs

PDP3960 Description

30V N-Channel MOSFETs PDP3960 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDP3960 Features

* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDP3960
Manufacturer
Potens semiconductor
File Size
669.61 KB
Datasheet
PDP3960-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDP3960-like datasheet