IRFP048N
Power MOSFET
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Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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IRFP048 - Power MOSFET
(Power MOSFET)
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IRFP048 - Power MOSFET
(Vishay)
Power MOSFET
IRFP048, SiHFP048
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
60 VGS = 10 V
110
Qgs (nC)
29
Qgd (nC)
38
.
IRFP048 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP048
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP048N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP048N,IIRFP048N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tes.
IRFP048NPbF - Power MOSFET
(International Rectifier)
Lead-Free
PD- 95422
IRFP048NPbF
.irf.
1 06/16/04
IRFP048NPbF
2 .irf.
IRFP048NPbF
.irf.
3
IRFP048NPbF
4 .irf.
IRFP04.
IRFP048PbF - Power MOSFET
(International Rectifier)
Lead-Free
PD- 95671
IRFP048PbF
1
IRFP048PbF
2
IRFP048PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Ma.
IRFP048R - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
.
IRFP048R - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP048R
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS .
IRFP048R - Power MOSFET
(International Rectifier)
.
IRFP040 - (IRFP040 / IRFP042) N-Channel Power MOSFET
(International Rectifier)
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