Datasheet Details
- Part number
- IRFP048
- Manufacturer
- Vishay ↗
- File Size
- 1.27 MB
- Datasheet
- IRFP048-Vishay.pdf
- Description
- Power MOSFET
IRFP048 Description
Power MOSFET IRFP048, SiHFP048 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 10 V 110 Qgs (nC) 29 Qgd (nC) 38 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
IRFP048 Features
* Dynamic dV/dt Rating
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC
Available
RoHS
IRFP048 Applications
* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFP048PbF
📁 Related Datasheet
📌 All Tags
IRFP048 Stock/Price