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IRFP048 - Power MOSFET

IRFP048 Description

Power MOSFET IRFP048, SiHFP048 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 10 V 110 Qgs (nC) 29 Qgd (nC) 38 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFP048 Features

* Dynamic dV/dt Rating
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

IRFP048 Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFP048PbF

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Power MOSFET Vishay
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