CM200DU-12F Datasheet - Powerex Power Semiconductors

CM200DU-12F, IGBT Module

CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volt.
Powerex IGBTMOD™ Modules are designed for use in switching applications.

Features

* Low Drive Power
* Low VCE(sat)
* Discrete Super-Fast Recovery Free-Wheel Diode

Applications

* Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

CM200DU-12F_PowerexPowerSemiconductors.pdf