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QIC6508001 Datasheet - Powerex Power Semiconductors

QIC6508001 Dual Common Emitter HV IGBT

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Preliminary Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts S NUTS (3TYP) A D FF J (2TYP) C 78 56 BE 1 23 H M H 4 G (3TYP) T (SCREWING DEPTH) R (DEEP) K (3TYP) L (2TYP) V (4TYP) U (5TYP) P Q N (NC) 4 5 6 7 8 1 2 3 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.89 48.0 D 4.88±0.01 124.0±0.25 E 2..

QIC6508001 Features

*  -40 to 150°C Extended  Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HV

QIC6508001-PowerexPowerSemiconductors.pdf

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Datasheet Details

Part number:

QIC6508001

Manufacturer:

Powerex Power Semiconductors

File Size:

336.63 KB

Description:

Dual common emitter hv igbt.

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