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QIC6508001

Dual Common Emitter HV IGBT

QIC6508001 Features

*  -40 to 150°C Extended  Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HV

QIC6508001 Datasheet (336.63 KB)

Preview of QIC6508001 PDF

Datasheet Details

Part number:

QIC6508001

Manufacturer:

Powerex Power Semiconductors

File Size:

336.63 KB

Description:

Dual common emitter hv igbt.
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Preliminary Dual Common Emitter HVIGBT Module .

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QIC6508001 Dual Common Emitter IGBT Powerex Power Semiconductors

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