QIC6508001 Datasheet, igbt equivalent, Powerex Power Semiconductors

QIC6508001 Features

• Igbt  -40 to 150°C Extended  Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceram

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Part number:

QIC6508001

Manufacturer:

Powerex Power Semiconductors

File Size:

336.63kb

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📄 Datasheet

Description:

Dual common emitter hv igbt. Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance

QIC6508001 Application

• Applications like medium voltage drives and auxiliary traction applications. Features:  -40 to 150°C Extended  Temperature Range  100% Dynami

TAGS

QIC6508001

Powerex Power Semiconductors

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