QIC6508001 - Dual Common Emitter HV IGBT

Powerex Power Semiconductors

QIC6508001 Datasheet Preview — Preview of QIC6508001 PDF

Datasheet Details

Part number	QIC6508001
Manufacturer	Powerex Power Semiconductors
File Size	336.63 KB
Description	Dual Common Emitter HV IGBT
Datasheet	QIC6508001-PowerexPowerSemiconductors.pdf

QIC6508001 Product details

Description

Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications.

Features

 -40 to 150°C Extended Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules  Copper Baseplate  Creepage and Clearance Meet IEC 60077-1  Rugged SWSOA and RRSOA.

📁 QIC6508001 Similar Datasheet

Other Datasheets by Powerex Power Semiconductors

QIC0610001 - Dual Common Emitter IGBT
QIC0620001 - Dual Common Emitter IGBT
QIC0620003 - Dual IGBT
QIC1208001 - Dual AC Switch IGBT

Published: Jun 25, 2016 |