PSHM06 Datasheet - Powersem GmbH

PSHM06 CoolMOS Power MOSFET

ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base PSHM 40/06 ID25 VDSS RDSon = 38 A = 600 V = 70 mΩ 1) L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 Preliminary Data Sheet MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Maximum Ratings 600 V ±2.

PSHM06 Features

* ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - Hig

PSHM06 Datasheet (105.72 KB)