PSHM120 Datasheet - Powersem GmbH

PSHM120 Power MOSFET

ECO-PACTM 2 Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family PSHM 120/01 L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 ID25 VDSS RDSon trr = 75 A = 100 V = 25 mΩ < 200 ns Preliminary Data Sheet MOSFETs Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤.

PSHM120 Features

* HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode

* ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendl

PSHM120-PowersemGmbH.pdf