* HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode
* ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendl
PSHM120
Powersem GmbH
130.74 KB
Power mosfet.
ECO-PACTM 2 Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family PSHM 120/01 L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC.
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