PNMTO600V4
Prisemi
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N-channel mosfet. The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω)
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PNMTOF600V4 - N-Channel MOSFET
(Prisemi)
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（2）
VDS(V) 600
.
PNMT20V6 - N-Channel MOSFET
(Prisemi)
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.02.
PNMT2302 - N-Channel MOSFET
(Prisemi)
Description
Trench Power LV MOSFET technology High Power and current handing capability
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 30@VGS = 4.
PNMT3400 - N-Channel MOSFET
(Prisemi)
Description
Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching
MOSFET Product Summary
VDS(V) 30
.
PNMT50V02E - N-Channel MOSFET
(Prisemi)
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 50
MOSFET Product Summary
R.
PNMT60V02 - N-Channel MOSFET
(Prisemi)
PNMT60V02 N-Channel MOSFET
Description
PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density .
PNMT6N1 - Transistor
(Prisemi)
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1 is posed by a transistor and a MOSFET
Transistor:
Very low c.
PNMT6N1-LB - Transistor
(Prisemi)
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1-LB is posed by a transistor and a MOSFET
Transistor:
Very lo.
PNMT6N2 - Transistor
(Prisemi)
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2 is posed by a transistor and a MOSFET
Transistor:
Very low c.
PNMT6N2B - Transistor
(Prisemi)
PNMT6N2B Transistor with N-MOSFET
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2B is posed by a transistor and .
