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PNMTO600V4 Datasheet - Prisemi

PNMTO600V4 N-Channel MOSFET

The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600 MOSFET Product Summary RDS(on)(Ω) ID(A) 1.9@ VGS=10V 4 G（1） S（3） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions OFF CHARACTERISTICS Drain-So.

PNMTO600V4-Prisemi.pdf

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Datasheet Details

Part number:

PNMTO600V4

Manufacturer:

Prisemi

File Size:

119.32 KB

Description:

N-channel mosfet.

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PNMTO600V4 PNMTO600V4 N-Channel MOSFET Prisemi

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