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Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20
MOSFET Product Summary
RDS(on)(Ω)
ID(mA)
0.45@ VGS=-4.5V
0.62@ VGS=-2.5V
-800
0.86@ VGS=-1.8V
PPM3FD20V1E P-Channel MOSFET
Top View
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Maximum Power Dissipation (Note 1)(Note 4)
Maximum Power Dissipation (Note 2)(Note 4) Pulsed Drain Current(Note 3) Operating Junction Temperature Lead Temperature Storage Temperature Range
Continuous Pulsed TA=25°C TA=70°C TA=25°C TA=70°C
Symbol
VDS VGS ID IDP
PD
PD
IDM TJ TL Tstg
Value
-20 ±10 -800 -1200 270 170 240 150 -1.
PPM3FD20V1E Datasheet
