PSM8N03R2
Description
The PSM8N03R2 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
MOSFET Product Summary
VDS(V) 30
Feature
RDS(on)(mΩ)(Typ) 1.3@ VGS = 10V 2.3@ VGS = 4.5V
ID(A) 181
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Excellent Qgd x RDS(ON) Product(FOM)
- Advanced Technology for DC-DC Converts
- Small Form Factor Thermally Efficient Package
Enables Higher Density End Products
- 100% UIS (Avalanche) Rated
- Lead-Free Finish ; Ro HS pliant
- Halogen and Antimony Free. ”Green” Device
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation4) Avalanche Current @ L=0.3m H
TC=25℃ TC=100℃
Avalanche...
