| Part number | PSM8N03R4 |
|---|---|
| Datasheet | PSM8N03R4-Prisemi.pdf |
| File Size | 427.91 KB |
| Manufacturer | Prisemi |
| Description | N-Channel MOSFET |
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The PSM8N03R4 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 4.3@ VGS = 10V 7.0@ VGS = 4.5V ID(A).
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