PSM8N03R4 - N-Channel MOSFET

Prisemi

General Description

The PSM8N03R4 uses split gate trench technology to provide excellent RDS(ON) low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

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PSM8N03R4 n-channel mosfet by Prisemi - Datasheet Preview

Datasheet Details

Part number	PSM8N03R4
Manufacturer	Prisemi
File Size	427.91 KB
Description	N-Channel MOSFET
Datasheet	PSM8N03R4 Datasheet

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Description The PSM8N03R4 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 4.3@ VGS = 10V 7.0@ VGS = 4.5V ID(A) 75 Feature  Low RDS(ON) - Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product(FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Lead-Free Finish ; RoHS Compliant  Halogen and Antimony Free.