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PSM8N03R2 - N-Channel MOSFET

General Description

The PSM8N03R2 uses split gate trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

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Datasheet Details

Part number PSM8N03R2
Manufacturer Prisemi
File Size 1.07 MB
Description N-Channel MOSFET
Datasheet download datasheet PSM8N03R2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The PSM8N03R2 uses split gate trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications. MOSFET Product Summary VDS(V) 30 Feature RDS(on)(mΩ)(Typ) 1.3@ VGS = 10V 2.3@ VGS = 4.5V ID(A) 181  Low RDS(ON) - Ensures On-State Losses are Minimized  Excellent Qgd x RDS(ON) Product(FOM)  Advanced Technology for DC-DC Converts  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Lead-Free Finish ; RoHS Compliant  Halogen and Antimony Free.