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PSM8N03R4 Datasheet - Prisemi

PSM8N03R4 - N-Channel MOSFET

The PSM8N03R4 uses split gate trench technology to provide excellent RDS(ON) low gate charge.

This device is suitable for power management and high efficiency applications at high switching frequencies applications.

MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 4.3@ VGS = 10V 7.0@ VGS = 4.5V ID(A

PSM8N03R4-Prisemi.pdf

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Datasheet Details

Part number:

PSM8N03R4

Manufacturer:

Prisemi

File Size:

427.91 KB

Description:

N-channel mosfet.

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