Description
December 2006 www.DataSheet4U.com HYB18L512160BF-7.5 HYE18L512160BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM RoHS compliant Data S hee.
133 MHz 4 Banks × 8 Mbit × 16 LP-SDRAM 133 MHz 4 Banks × 8 Mbit × 16 LP-SDRAM Standard Temperature Range Extended Temperature Range
1) HY[B/E]: Design.
Features
* 4 banks × 8 Mbit × 16 organization Fully synchronous to positive clock edge Four internal banks for concurrent operation Programmable CAS latency: 2, 3 Programmable burst length: 1, 2, 4, 8 or full page Programmable wrap sequence: sequential or interleaved Programmable drive strength Auto refresh a
Applications
* 512-Mbit Mobile-RAM RoHS compliant
Data S heet
Rev. 1.22
Data Sheet. www. DataSheet4U. com
HY[B/E]18L512160BF-7.5 512-Mbit Mobile-RAM
HYB18L512160BF-7.5, HYE18L512160BF-7.5 Revision History: 2006-12, Rev. 1.22 Page All 51 54 50 Subjects (major changes since last revision) Qimonda update IDD7 chang