HYB25D512800DC, HYB25D512400DE Datasheet - Qimonda

HYB25D512800DC 512M DDR SDRAM

Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bit.

July 2008 www.DataSheet4U.com HYB25D512400D[E/F/T] HY[B/I]25D512800D[C/E/F/T](L) HY[B/I]25D512160D[C/E/F/T](L) 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.01 Internet Data Sheet www.DataSheet4U.com HY[B/I]25D512[40/80/16]0D[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.01, 2008-07 All Page 29 Page 33 All Adapted internet edition Changed tCK.MAX at CL=3 for -5 speed Added new IDD values New data sheet Previous Revisi.

HYB25D512800DC Features

* Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and

HYB25D512400DE_Qimonda.pdf

HYB25D512800DC Datasheet Preview — This datasheet PDF includes multiple part numbers: HYB25D512800DC, HYB25D512400DE. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HYB25D512800DC, HYB25D512400DE

Manufacturer:

Qimonda

File Size:

2.42 MB

Description:

512m ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: HYB25D512800DC, HYB25D512400DE.
Please refer to the document for exact specifications by model.

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HYB25D512800DC HYB25D512400DE 512M DDR SDRAM Qimonda

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