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TGM2635-CP Datasheet - Qorvo

X-Band 100W GaN Power Amplifier

TGM2635-CP Features

* Frequency Range: 7.9

* 11 GHz

* PSAT: 50 dBm (PIN = 28 dBm)

* PAE: 35% (PIN = 28 dBm)

* Large Signal Gain: 22 dB (PIN = 28 dBm)

* Small Signal Gain: 26 dB

* Bias: VD = 28 V, IDQ = 1.3 A

* Package Dimensions: 19.05 x 19.05 x 4.52 mm

TGM2635-CP General Description

TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) *8 to *0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipa.

TGM2635-CP Datasheet (926.58 KB)

Preview of TGM2635-CP PDF

Datasheet Details

Part number:

TGM2635-CP

Manufacturer:

Qorvo

File Size:

926.58 KB

Description:

X-band 100w gan power amplifier.
TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635 CP is a packaged X-band, high power amplifier fabricated on .

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TGM2635-CP X-Band 100W GaN Power Amplifier Qorvo

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