TGM2635-CP Datasheet | Qorvo

Overview Qorvo’s TGM2635- CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.25um Ga N on Si C process. The TGM2635- CP operates from 7.9 -  11 GHz and provides 100 W of saturated output power with 22.5 d B of large signal gain and greater than 35 % power- added efficiency. The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGM2635-CP is ideally suited for both mercial and military X-Band radar systems, satellite munications systems, and data links. Ro HS pliant. Key Features - Frequency Range: 7.9 - 11 GHz - PSAT: 50 d Bm (PIN = 28 d Bm) - PAE: 35% (PIN = 28 d Bm) - Large Signal Gain: 22 d B (PIN = 28 d Bm) - Small Signal Gain: 26 d B - Bias: VD = 28 V, IDQ = 1.3 A - Package Dimensions: 19.05 x 19.05 x 4.52 mm - Performance Under Pulsed Operation Functional Block Diagram Applications - X-band Radar - Satellite munications - Data Links Top View Data Sheet Rev. I, August 2023 Ordering Information Part Description TGM2635-CP X-band 100 W Ga N Power Amplifier 1 of 14 .qorvo. ® X-Band 100 W Ga N Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) - 8 to - 0 V Drain Current (ID) 16...