* II Maximum safe-area-of operation curves II ISIb-limit line beginning at 25 V II High-current capability a Low saturation voltage at high beta a High-dissipation capability a Low thermal resistance RCA-2N5575 and 2N5578° are high,current, high-power, hometaxial-base silicon n-p-n transistors. They
2N5575
RCA
495.32 KB
Power transistors.
File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
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Power Transistors
Solid State Division
2N5575 2N5578
Modifi.
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