2N5921
RCA
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Rf power transistor.
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5929
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 10A ·Low C.
2N5929 - Bipolar NPN Device
(Seme LAB)
2N5929
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N5900 - GERMANIUM PNP POWER TRANSISTORS
(ETC)
2N5887 thru 2N590 1 (GERMANIUM)
GERMANIUM PNP POWER TRANSISTORS
· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5901 - GERMANIUM PNP POWER TRANSISTORS
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2N5887 thru 2N590 1 (GERMANIUM)
GERMANIUM PNP POWER TRANSISTORS
· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5902 - MONOLITHIC DUAL N-CHANNEL JFET
(Intersil Corporation)
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2N5902 - dual n-channel JFET
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matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
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ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.
2N5902 - N-Channel Monolithic Dual JFET
(National Semiconductor)
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2N5903 - monolithic dual n-channel JFET
(Intersil Corporation)
.
2N5903 - dual n-channel JFET
(Siliconix)
matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
Impedance Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.