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2N5929

Silicon NPN Power Transistors

2N5929 General Description


*DC Current Gain- : hFE= 20-100@IC= 10A
*Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS
*Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag.

2N5929 Datasheet (134.75 KB)

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Datasheet Details

Part number:

2N5929

Manufacturer:

Inchange Semiconductor

File Size:

134.75 KB

Description:

Silicon npn power transistors.

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2N5929 Silicon NPN Power Transistors Inchange Semiconductor

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