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2N5929 Silicon NPN Power Transistors

2N5929 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5929 .
DC Current Gain- : hFE= 20-100@IC= 10A. Low Collector Saturation Voltage- : VCE(sat)= 1. Designed for gene.

2N5929 Applications

* Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base C

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Datasheet Details

Part number
2N5929
Manufacturer
Inchange Semiconductor
File Size
134.75 KB
Datasheet
2N5929-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
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