2N5930 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5930 .
DC Current Gain- : hFE= 20-100@IC= 10A. Low Collector Saturation Voltage- : VCE(sat)= 1. Designed for gene.

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Datasheet Specifications

Part number: 2N5930
Manufacturer: Inchange Semiconductor
File Size: 134.88 KB
Datasheet: 2N5930-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base

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2N5930 Silicon NPN Power Transistors Inchange Semiconductor

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