2N5301
Inchange Semiconductor
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Silicon npn power transistors. With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS Fo
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2N5301 - POWER TRANSISTORS
(ON Semiconductor)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5301/D
High-Power NPN Silicon Transistors
. . . for use in power amplifier and switc.
2N5301 - Bipolar NPN Device
(Seme LAB)
2N5301
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N5301 - NPN SILICON POWER TRANSISTOR
(SSDI)
.
2N5301 - Bipolar Transistor
(Multicomp)
Bipolar Transistor
Features:
• High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emitter saturation Voltage VCE(sa.
2N5301 - Silicon NPN Transistor
(NTE)
2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier
TO−3 Type Package
Description: The 2N5301 and 2N5303 are silicon NPN transistors in .
2N5301 - N-CHANNEL JFET
(Micross)
2N5301 N-CHANNEL JFET
Linear Systems replaces discontinued LF5301 and PF5301
The 2N5301 is a very High Input Impedance N-Channel JFET amplifier
The 2.
2N5301 - SILICON NPN Transistor
(Toshiba)
:
SILICON NPN TRIPLE DIFFUSED TYPE
3
2N5301
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS
Unit in mm
FEATU.
2N5302 - POWER TRANSISTORS
(ON Semiconductor)
2N5302 High−Power NPN Silicon Transistor
High−power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Featur.
2N5302 - NPN SILICON POWER TRANSISTOR
(SSDI)
.
2N5302 - Bipolar NPN Device
(Seme LAB)
2N5302
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
