2N5932 Datasheet, Transistors, Inchange Semiconductor

PDF File Details

Part number:

2N5932

Manufacturer:

Inchange Semiconductor

File Size:

134.28kb

Download:

📄 Datasheet

Description:

Silicon npn power transistors.

DC Current Gain- : hFE= 20-100@IC= 10A

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIO

2N5932 Application

• Applications
• Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

TAGS

2N5932

Inchange Semiconductor

📁 Related Datasheet

2N5930 - Bipolar NPN Device (Seme LAB)
2N5930 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

2N5930 - Silicon NPN Power Transistors (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5930 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low C.

2N5931 - Silicon NPN Power Transistors (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5931 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low C.

2N5932 - Bipolar NPN Device (Seme LAB)
2N5932 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

2N5933 - Bipolar NPN Device (Seme LAB)
2N5933 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

2N5933 - Silicon NPN Power Transistors (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5933 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 20A ·Low C.

2N5934 - Bipolar NPN Device (Seme LAB)
2N5934 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

2N5934 - Silicon NPN Power Transistors (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5934 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 20A ·Low C.

2N5935 - Bipolar NPN Device (Seme LAB)
.. 2N5935 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.1.

2N5935 - Silicon NPN Power Transistors (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5935 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 30A ·Low C.