2N5935 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5935 .
DC Current Gain- : hFE= 20-100@IC= 30A. Low Collector Saturation Voltage- : VCE(sat)= 2. Designed for use.

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Datasheet Specifications

Part number: 2N5935
Manufacturer: Inchange Semiconductor
File Size: 135.52 KB
Datasheet: 2N5935-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay driver service. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Coll

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2N5935 Silicon NPN Power Transistors Inchange Semiconductor

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