* High de current gain: hFE = 1000 min_ at IC = 3 A
* Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial constructio
RCA1000
RCA
145.08 KB
Power transistor.
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DDLn3LJD
Solid State Division
Power Transistors
RCA1000 RCA1001
a-Ampere.
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