" Fast turn-off time - 10 j1s max. CI Center gate construction provides
" High di/dt and dv/dt capabilities
rapid uniform gate-current spreading for
" Shorted-emitter gate-cathode construction faster turn-on with substantially reduced ___ contains an internally diffused resistor heating effects
between gate and cathode
e Low thermal resistance
These RCA types are all-diffused, silicon controlled rectifiers.
📁 S7432M Similar Datasheet
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