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RF2105L Datasheet - RF Micro Devices

RF2105L HIGH POWER LINEAR UHF AMPLIFIER

The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring l.

RF2105L_RFMicroDevices.pdf

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Datasheet Details

Part number:

RF2105L

Manufacturer:

RF Micro Devices

File Size:

68.78 KB

Description:

High power linear uhf amplifier.

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RF2105L RF2105L HIGH POWER LINEAR UHF AMPLIFIER RF Micro Devices

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