RF2105L

HIGH POWER LINEAR UHF AMPLIFIER

RF Micro Devices

RF2105L General Description

The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring l.

RF2105L Datasheet (68.78 KB)

RF2105L Datasheet Preview — Preview of RF2105L PDF

Datasheet Details

Part number:

RF2105L

Manufacturer:

RF Micro Devices

File Size:

68.78 KB

Description:

High power linear uhf amplifier.
2 Typical Applications

* 900 MHz ISM Band Applications

* 400 MHz Industrial Radios

* Digital Communication Systems RF2105L HI.

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RF2105L HIGH POWER LINEAR UHF AMPLIFIER RF Micro Devices

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RF2105L General Description

Datasheet Details

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