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RF2119 Datasheet - RF Micro Devices

RF2119 HIGH EFFICIENCY 2V POWER AMPLIFIER

The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, s.

RF2119 Datasheet (79.68 KB)

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Datasheet Details

Part number:

RF2119

Manufacturer:

RF Micro Devices

File Size:

79.68 KB

Description:

High efficiency 2v power amplifier.

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RF2119 HIGH EFFICIENCY POWER AMPLIFIER RF Micro Devices

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