RFPA2172 Datasheet - RF Micro Devices

RFPA2172 medium-power high efficiency amplifier IC

Pin Name Description Interface Schematic 1 GND phyGsircoaullnydschoonrtnaencdtiocno.nnFeocr tbiemsmt peedrifaotremlyatnocteh,ekegreoputnrdacpelsane. 2 GND Gkroeuenpdtrcaocnensepchtiyosnicfaolrlythsgheroodrurtnivadenrpdslactaongnee.n.ecFtoirmbmesetdpiaetrefolyrmtoatnhcee, 3 RF IN nepeRod.

RFMD + TriQuint = Qorvo RFPA2172 ISM Band 3.6V, 250mW AMP with Analog Gain Control The RFPA2172 is a medium-power high efficiency amplifier IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45 GHz Bluetooth applications and frequency hopping/direct sequence spreadspectrum cordless telephones or other applications in the 902 MHz to 928 MHz IS.

RFPA2172 Features

* analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100 mW transmit power at the antenna port. GND GND VCC GND GND 1 16 15 14 13 GND 2 12 RF OUT RF IN 3 11 RF OUT GND 4 Bias 10 GND 56789 GND GND APC VPD GND Functional Block D

RFPA2172-RFMicroDevices.pdf