medium-power Datasheet | Specifications & PDF Download

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

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2SD882 NPN medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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FZT955 Green 140V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features  BVCEO > -140V  IC = -4A High Continuous Collector Current  ICM = -10A Peak Pulse

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

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Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High em

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UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high pe

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Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

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PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

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DISCRETE SEMICONDUCTORS DATA SHEET M3D110 www.DataSheet.net/ BC140; BC141 NPN medium power transistors Product specification Supersedes data of Sep

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Plastic Medium-Power Silicon NPN Transistors BD135G, BD137G, BD139G This series of plastic, medium−power silicon NPN transistors are designed for use

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D Wide Range of Supply Voltages Over Specified Temperature Range: TA = – 40°C to 85°C . . . 2 V to 8 V D Fully Characterized at 3 V and 5 V D Single-S

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Bulletin I2401 rev. A 07/00 50RIA SERIES MEDIUM POWER THYRISTORS Features High current rating Excellent dynamic characteristics dv/dt = 1000V/µs opti

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Bulletin I2401 rev. A 07/00 50RIA SERIES MEDIUM POWER THYRISTORS Features High current rating Excellent dynamic characteristics dv/dt = 1000V/µs opti

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Bulletin I2401 rev. A 07/00 50RIA SERIES MEDIUM POWER THYRISTORS Features High current rating Excellent dynamic characteristics dv/dt = 1000V/µs opti

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SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400

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