RFPA5026 Datasheet (RF Micro Devices) - class AB Heterojunction Bipolar Transistor (HBT) power amplifier

RFPA5026, class AB Heterojunction Bipolar Transistor (HBT) power amplifier

RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

This product is specifically designed for use

RFPA5026 Features

* P1dB=33dBm at 5V

* 802.11g 54Mb/s Class AB Performance

* POUT=25dBm at 2.5% EVM, VCC 5V, 680mA

* On-Chip Output Power Detector

* Input Prematched Input and Output

* Proprietary Low Thermal Resistance Package

* Power Up/Down control