RFPA5026 class AB Heterojunction Bipolar Transistor (HBT) power amplifier

RF Micro Devices

Description

RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Featu.
RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

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Datasheet Specifications

Part number: RFPA5026
Manufacturer: RF Micro Devices
File Size: 640.22 KB
Datasheet: RFPA5026-RFMicroDevices.pdf
Description: class AB Heterojunction Bipolar Transistor (HBT) power amplifier

Features

* P1dB=33dBm at 5V
* 802.11g 54Mb/s Class AB Performance
* POUT=25dBm at 2.5% EVM, VCC 5V, 680mA
* On-Chip Output Power Detector
* Input Prematched Input and Output
* Proprietary Low Thermal Resistance Package
* Power Up/Down control

Applications

* 802.16 WiMAX Driver or Output Stage

RFPA5026 Distributors

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RFPA5026 class Heterojunction Bipolar Transistor HBT power amplifier RF Micro Devices

RF Micro Devices RFPA5026-like datasheet