RFPA5026 Datasheet - RF Micro Devices

RFPA5026 class AB Heterojunction Bipolar Transistor (HBT) power amplifier

RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use .

RFPA5026 Features

* P1dB=33dBm at 5V

* 802.11g 54Mb/s Class AB Performance

* POUT=25dBm at 2.5% EVM, VCC 5V, 680mA

* On-Chip Output Power Detector

* Input Prematched Input and Output

* Proprietary Low Thermal Resistance Package

* Power Up/Down control

RFPA5026 Datasheet (640.22 KB)

RFPA5026 Datasheet Preview — Preview of RFPA5026 PDF

Datasheet Details

Part number:

RFPA5026

Manufacturer:

RF Micro Devices

File Size:

640.22 KB

Description:

Class ab heterojunction bipolar transistor (hbt) power amplifier.

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RFPA5026 class Heterojunction Bipolar Transistor HBT power amplifier RF Micro Devices

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