SXA389BZ Datasheet (RF Micro Devices) - MEDIUM POWER GaAs HBT AMPLIFIER

SXA389BZ, MEDIUM POWER GaAs HBT AMPLIFIER

RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package.

These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafe

SXA389BZ Features

* Lower RTH for increased MTTF 108 Hours at TLead=85C

* On-Chip Active Bias Control, Single 5V Supply

* Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz

* High P1dB :+25dBm Typ.

* High Gain:+18.5dB at 850MHz

* Efficient: Consumes Only 575 mW Applications

* W-CDMA, PCS, Ce