SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER

RF Micro Devices

Description

SXA389BZ 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias SXA389BZ 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH .
RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic pac.

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Datasheet Specifications

Part number: SXA389BZ
Manufacturer: RF Micro Devices
File Size: 363.88 KB
Datasheet: SXA389BZ-RFMicroDevices.pdf
Description: MEDIUM POWER GaAs HBT AMPLIFIER

Features

* Lower RTH for increased MTTF 108 Hours at TLead=85C
* On-Chip Active Bias Control, Single 5V Supply
* Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz
* High P1dB :+25dBm Typ.
* High Gain:+18.5dB at 850MHz

Applications

* Its high linearity makes it an ideal choice for multi-carrier as well as digital Optimum Technology applications. Matching® Applied
* GaAs HBT Typical OIP3, P1dB, Gain GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT dBm 50 45 40 35 30 25 20 OIP3 P1dB Gain Si CMOS Si

SXA389BZ Distributors

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SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices

RF Micro Devices SXA389BZ-like datasheet

SXA-389Z