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SXA389BZ Datasheet - RF Micro Devices

SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER

RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafe.

SXA389BZ Features

* Lower RTH for increased MTTF 108 Hours at TLead=85C

* On-Chip Active Bias Control, Single 5V Supply

* Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz

* High P1dB :+25dBm Typ.

* High Gain:+18.5dB at 850MHz

* Efficient: Consumes Only 575 mW Applications

* W-CDMA, PCS, Ce

SXA389BZ Datasheet (363.88 KB)

SXA389BZ Datasheet Preview — Preview of SXA389BZ PDF

Datasheet Details

Part number:

SXA389BZ

Manufacturer:

RF Micro Devices

File Size:

363.88 KB

Description:

Medium power gaas hbt amplifier.

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SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices

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