SXA389BZ - MEDIUM POWER GaAs HBT AMPLIFIER

RF Micro Devices

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Datasheet Details

Part number	SXA389BZ
Manufacturer	RF Micro Devices
File Size	363.88 KB
Description	MEDIUM POWER GaAs HBT AMPLIFIER
Datasheet	SXA389BZ-RFMicroDevices.pdf

SXA389BZ Product details

Description

RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package.These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.These amplifiers are spe- cially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.I

Features

Lower RTH for increased MTTF 108 Hours at TLead=85C.
On-Chip Active Bias Control, Single 5V Supply.
Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz.
High P1dB :+25dBm Typ.
High Gain:+18.5dB at 850MHz.
Efficient: Consumes Only 575 mW.

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Published: Apr 1, 2016 |