SPB2026Z Datasheet - RFMD

SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost a.

SPB2026Z Features

* an input power detector, on/off power control, ESD protection, excellent over- Optimum Technology Matching® Applied all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. GaAs HBT GaAs MESFET p Vcc = 5V

* InGaP HBT SiGe BiCM

SPB2026Z-RFMD.pdf