SPB200UFA
VMI
65.50kb
(spbxx0ufa) single phase bridge.
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SPB200UFB - (SPBxx0UFB) Single Phase Bridge
(VMI)
..
5,000 V - 20,000 V Single Phase Bridge
2.0 A Forward Current 70 ns Recovery Time
SPB50UFB SPB100UFB SPB150UFB SPB200UFB
ELECTRI.
SPB2026Z - 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
(RFMD)
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
NOT FOR NEW DESIGNS.
SPB20N60C2 - Cool MOS Power Transistor
(Infineon Technologies)
Final data
SPP20N60C2, SPB20N60C2 SPA20N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best R DS(on.
SPB20N60C3 - Cool MOS& Power Transistor
(Infineon Technologies)
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SPB20N60C3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
SPB20N60C3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.
SPB20N60S5 - Cool MOS Power Transistor
(Infineon Technologies)
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
SPB20N60S5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
SPB21N10 - SIPMOS Power-Transistor
(Infineon Technologies)
Preliminary data
SPI21N10 SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanch.
SPB21N10 - SIPMOS Power-Transistor
(Infineon Technologies)
Preliminary data
SPI21N10 SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanch.
SPB21N50C3 - Power Transistor
(Infineon Technologies)
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
