RF2155 Datasheet (RF Micro Devices) - 3V PROGRAMMABLE GAIN POWER AMPLIFIER

RF2155, 3V PROGRAMMABLE GAIN POWER AMPLIFIER

The RF2155 is a 3V medium power programmable gain amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 9

RF2155 Features

* Single 3V Supply

* 500mW CW Output Power

* 31dB Small Signal Gain

* Up to 60% Efficiency

* Digitally Controlled Output Power

* 430MHz to 930MHz Fre- quency Range Applications

* Analog Communication Systems

* 900MHz Spread Spectrum Sys