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SXB2089Z MEDIUM POWER HBT AMPLIFIER

SXB2089Z Description

SXB2089Z 5MHz to 2500 MHz Medium Power InGaP/GaAs HBT Amplifier SXB2089Z 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Pro.
RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic.

SXB2089Z Features

* High OIP3:+43dBm at 1960 MHz
* P1dB:24dBm
* High Linearity/ACP Perfor- mance
* Robust 2000V ESD, Class 2

SXB2089Z Applications

* It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied
* GaAs HBT GaAs MESFET
* InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Typical IP3, P1dB, Gain 50 45 IP3 IP3

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Datasheet Details

Part number
SXB2089Z
Manufacturer
RF Micro Devices
File Size
485.62 KB
Datasheet
SXB2089Z-RFMicroDevices.pdf
Description
MEDIUM POWER HBT AMPLIFIER

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MEDIUM POWER HBT AMPLIFIER RF Micro Devices
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