B1436 - 2SB1436

ROHM Electronics

Datasheet Details

1) Low VCE(sat). VCE(sat) =.
0.35V (Typ. ) (IC/IB =.
4A /.
0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. 2SB1412 1.5±0.3 6.5±0.2 0.2 5.1+.
0.1 C0.5 0.2 2.3+.
0.1 0.5±0.1 0.3 5.5+.
0.1 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+.
0.05 0.75 0.9 0.65±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 !Structure Epitaxial planar type PNP silicon transistor ROHM : MPT3.

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Published: Apr 24, 2009 |