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B1431 - PNP Silicon Epitaxial Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE =.
  • 2 V, IC =.
  • 3 A).
  • Mold package that does not require an insulating board or insulation bushing.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
B1432 PNP SILICON EPITAXIAL TRANSISTOR
B1453 2SB1453

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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'$7$ 6+((7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 )25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63((' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = −2 V, IC = −3 A) • Mold package that does not require an insulating board or insulation bushing QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.