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B1453 - 2SB1453

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High DC current amplifier ratio hFE ≥ 100 (VCE =.
  • 5 V, IC =.
  • 0.5 A).
  • Mold package that does not require an insulating board or insulation bushing.

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Part Number Description
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Full PDF Text Transcription (Reference)

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DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.