* 1) Low on-resistance.
* Inner circuit (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain
* 1 (3) Source
* 1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant
* Pa
R6008FNJ Datasheet (848.62 KB)
R6008FNJ
848.62 KB
Mosfet.
NotNeRewcDoemsimgennsded for
R6008FNJ
Nch 600V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.95
8A 119W
*Outline
LPTS (SC-83)
.
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